Pixel with transfer gate with no isolation edge

Invention Grant

US07829922B2 Pixel with transfer gate with no isolation edge 有权

Title translation: 带传输门的像素，无隔离边

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Patent Title: Pixel with transfer gate with no isolation edge
Patent Title (中): 带传输门的像素，无隔离边
Application No.: US12249723

Application Date: 2008-10-10
Publication No.: US07829922B2

Publication Date: 2010-11-09
Inventor: Jeffrey A. McKee
Applicant: Jeffrey A. McKee
Applicant Address: KY Grand Cayman
Assignee: Aptina Imaging Corporation
Current Assignee: Aptina Imaging Corporation
Current Assignee Address: KY Grand Cayman
Agency: Dickstein Shapiro LLP
Main IPC: H01L31/062
IPC: H01L31/062 ; H01L31/113

Pixel with transfer gate with no isolation edge

Abstract:

A pixel and imager device, and method of forming the same, where the pixel has a transfer transistor gate associated with a photoconversion device and is isolated in a substrate by shallow trench isolation. The transfer transistor gate does not overlap the shallow trench isolation region.

Abstract(Chinese):

像素和成像器件及其形成方法，其中像素具有与光转换器件相关联的传输晶体管栅极，并通过浅沟槽隔离在衬底中隔离。传输晶体管栅极不与浅沟槽隔离区域重叠。

Public/Granted literature

US20090090945A1 PIXEL WITH TRANSFER GATE WITH NO ISOLATION EDGE Public/Granted day:2009-04-09

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L31/00	对红外辐射、光、较短波长的电磁辐射，或微粒辐射敏感的，并且专门适用于把这样的辐射能转换为电能的，或者专门适用于通过这样的辐射进行电能控制的半导体器件；专门适用于制造或处理这些半导体器件或其部件的方法或设备；其零部件（H01L51/42优先；由形成在一共用衬底内或其上的多个固态组件，而不是辐射敏感元件与一个或多个电光源的结合所组成的器件入H01L27/00）
H01L31/04	.用作光伏〔PV〕转换器件（制造中其测试入H01L21/66；制造之后其测试入H02S50/10）
H01L31/06	..以至少有一个电位跃变势垒或表面势垒为特征的
H01L31/062	...只是金属—绝缘体—半导体型势垒的