Invention Grant
- Patent Title: Semiconductor device and method for fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US11545521Application Date: 2006-10-11
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Publication No.: US07829924B2Publication Date: 2010-11-09
- Inventor: Susumu Akamatsu
- Applicant: Susumu Akamatsu
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2006-001636 20060106
- Main IPC: H01L23/58
- IPC: H01L23/58 ; H01L29/00
Abstract:
A trench isolation surrounding the lateral sides of an active region of a P-channel MIS transistor PTr and a trench isolation surrounding the lateral sides of an active region of an N-channel MIS transistor NTr have different film qualities.
Public/Granted literature
- US20070158721A1 Semiconductor device and method for fabricating the same Public/Granted day:2007-07-12
Information query
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