Invention Grant
- Patent Title: Semiconductor structure of a high side driver and method for manufacturing the same
- Patent Title (中): 高侧驱动器的半导体结构及其制造方法
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Application No.: US11474375Application Date: 2006-06-26
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Publication No.: US07829928B2Publication Date: 2010-11-09
- Inventor: Chiu-Chih Chiang , Chih-Feng Huang
- Applicant: Chiu-Chih Chiang , Chih-Feng Huang
- Applicant Address: TW Taipei
- Assignee: System General Corp.
- Current Assignee: System General Corp.
- Current Assignee Address: TW Taipei
- Agency: Bacon & Thomas, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A semiconductor structure of a high side driver and method for manufacturing the same is disclosed. The semiconductor of a high side driver includes an ion-doped junction and an isolation layer formed on the ion-doped junction. The ion-doped junction has a number of ion-doped deep wells, and the ion-doped deep wells are separated but partially linked with each other.
Public/Granted literature
- US20070296058A1 Semiconductor structure of a high side driver and method for manufacturing the same Public/Granted day:2007-12-27
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