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US07829929B2 Non-volatile memory device and non-volatile semiconductor integrated circuit device, including the same 有权
非易失性存储器件和非易失性半导体集成电路器件，包括相同的

Non-volatile memory device and non-volatile semiconductor integrated circuit device, including the same
Abstract:
A non-volatile memory device has improved operating characteristics. The non-volatile memory device includes an active region; a wordline formed on the active region to cross the active region; and a charge trapping layer interposed between the active region and the wordline, wherein a cross region of the active region and the wordline includes an overlap region in which the charge trapping layer is disposed and a non-overlap region in which the charge trapping layer is not disposed.
Abstract(Chinese):

非易失性存储器件具有改进的操作特性。 非易失性存储器件包括有源区; 在有源区域上形成的跨越有源区域的字线; 以及插入在有源区域和字线之间的电荷俘获层，其中有源区域和字线的交叉区域包括其中设置电荷捕获层的重叠区域和电荷捕获层是非重叠区域 没有处理

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