Invention Grant
US07829935B2 Semiconductor memory, semiconductor memory system using the memory, and method for manufacturing quantum dot used in semiconductor memory
有权
半导体存储器，使用存储器的半导体存储器系统以及用于制造半导体存储器中使用的量子点的方法
- Patent Title: Semiconductor memory, semiconductor memory system using the memory, and method for manufacturing quantum dot used in semiconductor memory
- Patent Title (中): 半导体存储器，使用存储器的半导体存储器系统以及用于制造半导体存储器中使用的量子点的方法
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Application No.: US12600986Application Date: 2008-03-26
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Publication No.: US07829935B2Publication Date: 2010-11-09
- Inventor: Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
- Applicant: Katsunori Makihara , Seiichi Miyazaki , Seiichiro Higashi
- Applicant Address: JP Higashihiroshima, Hiroshima
- Assignee: Hiroshima University
- Current Assignee: Hiroshima University
- Current Assignee Address: JP Higashihiroshima, Hiroshima
- Agency: Foley & Lardner LLP
- International Application: PCT/JP2008/000740 WO 20080326
- International Announcement: WO2009/118783 WO 20091001
- Main IPC: H01L21/336
- IPC: H01L21/336 ; H01L29/788
Abstract:
A semiconductor memory has a composite floating structure in which quantum dots composed of Si and coated with a Si oxide thin film are deposited on an insulating film formed on a semiconductor substrate, quantum dots coated with a high-dielectric insulating film are deposited on the quantum dots, and quantum dots composed of Si and coated with a high-dielectric insulating film are further deposited. Each of the quantum dots includes a core layer and a clad layer which covers the core layer. The electron occupied level in the core layer is lower than that in the clad layer.
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