Invention Grant
US07829940B2 Semiconductor component arrangement having a component with a drift zone and a drift control zone
有权
具有具有漂移区和偏移控制区的分量的半导体组件布置
- Patent Title: Semiconductor component arrangement having a component with a drift zone and a drift control zone
- Patent Title (中): 具有具有漂移区和偏移控制区的分量的半导体组件布置
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Application No.: US12163037Application Date: 2008-06-27
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Publication No.: US07829940B2Publication Date: 2010-11-09
- Inventor: Franz Hirler , Thoralf Kautzsch , Anton Mauder
- Applicant: Franz Hirler , Thoralf Kautzsch , Anton Mauder
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/732
- IPC: H01L29/732
Abstract:
Disclosed is a semiconductor including a component having a drift zone and a drift control zone. A first connection zone is adjacent to the drift zone and is doped more highly than the drift zone. A drift control zone is arranged adjacent to the drift zone and is coupled to the first connection zone. A drift control zone is dielectric arranged between the drift zone and the drift control zone. At least one rectifier element is arranged between the first connection zone and the drift control zone. A charging circuit is connected to the drift control zone.
Public/Granted literature
- US20090322417A1 SEMICONDUCTOR COMPONENT ARRANGEMENT HAVING A COMPONENT WITH A DRIFT ZONE AND A DRIFT CONTROL ZONE Public/Granted day:2009-12-31
Information query
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