Invention Grant
- Patent Title: Semiconductor memory device and a method of manufacturing the same
- Patent Title (中): 半导体存储器件及其制造方法
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Application No.: US12491756Application Date: 2009-06-25
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Publication No.: US07829952B2Publication Date: 2010-11-09
- Inventor: Masahiro Moniwa , Hiraku Chakihara , Kousuke Okuyama , Yasuhiko Takahashi
- Applicant: Masahiro Moniwa , Hiraku Chakihara , Kousuke Okuyama , Yasuhiko Takahashi
- Applicant Address: JP Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kanagawa
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2002-199308 20020708; JP2003-054378 20030228
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119
Abstract:
A memory cell of an SRAM has two drive MISFETs and two vertical MISFETs. The p channel vertical MISFETs are formed above the n channel drive MISFETs. The vertical MISFETs respectively mainly include a laminate formed of a lower semiconductor layer, intermediate semiconductor layer and upper semiconductor layer laminated in this sequence, a gate insulating film of silicon oxide formed on the surface of the side wall of the laminate, and a gate electrode formed so as to cover the side wall of the laminate. The vertical MISFETs are perfect depletion type MISFETs.
Public/Granted literature
- US20090261390A1 SEMICONDUCTOR MEMORY DEVICE AND A METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-10-22
Information query
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