Invention Grant
- Patent Title: Multichip semiconductor device, chip therefor and method of formation thereof
- Patent Title (中): 多芯片半导体器件,芯片及其形成方法
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Application No.: US11980641Application Date: 2007-10-31
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Publication No.: US07829975B2Publication Date: 2010-11-09
- Inventor: Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
- Applicant: Nobuo Hayasaka , Katsuya Okumura , Keiichi Sasaki , Mie Matsuo
- Applicant Address: JP Kawasaki-shi
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Kawasaki-shi
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP8-321931 19961202; JP9-305784 19971107; JP10-280225 19981001
- Main IPC: H01L29/40
- IPC: H01L29/40

Abstract:
A multichip semiconductor device is disclosed in which chips are stacked each of which comprises a semiconductor substrate formed on top with circuit components and an interlayer insulating film formed on the top of the semiconductor substrate. At least one of the chips has a connect plug of a metal formed in a through hole that passes through the semiconductor substrate and the interlayer insulating film. The chip with the connect plug is electrically connected with another chip by that connect plug.
Public/Granted literature
- US20080237888A1 Multichip semiconductor device, chip therefor and method of formation thereof Public/Granted day:2008-10-02
Information query
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