Invention Grant
US07829976B2 Microelectronic devices and methods for forming interconnects in microelectronic devices
有权
用于在微电子器件中形成互连的微电子器件和方法
- Patent Title: Microelectronic devices and methods for forming interconnects in microelectronic devices
- Patent Title (中): 用于在微电子器件中形成互连的微电子器件和方法
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Application No.: US12419029Application Date: 2009-04-06
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Publication No.: US07829976B2Publication Date: 2010-11-09
- Inventor: Kyle K. Kirby , Salman Akram , David R. Hembree , Sidney B. Rigg , Warren M. Farnworth , William M. Hiatt
- Applicant: Kyle K. Kirby , Salman Akram , David R. Hembree , Sidney B. Rigg , Warren M. Farnworth , William M. Hiatt
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Perkins Coie LLP
- Main IPC: H01L29/40
- IPC: H01L29/40

Abstract:
Microelectronic devices, methods for packaging microelectronic devices, and methods for forming interconnects in microelectronic devices are disclosed herein. In one embodiment, a method comprises providing a microelectronic substrate having a front side and a backside. The substrate has a microelectronic die including an integrated circuit and a terminal operatively coupled to the integrated circuit. The method also includes forming a passage at least partially through the substrate and having an opening at the front side and/or backside of the substrate. The method further includes sealing the opening with a conductive cap that closes one end of the passage while another end of the passage remains open. The method then includes filling the passage with a conductive material.
Public/Granted literature
- US20090191701A1 MICROELECTRONIC DEVICES AND METHODS FOR FORMING INTERCONNECTS IN MICROELECTRONIC DEVICES Public/Granted day:2009-07-30
Information query
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