Invention Grant
US07829979B2 High permeability layered films to reduce noise in high speed interconnects
有权
高磁导率分层膜，以降低高速互连中的噪声
- Patent Title: High permeability layered films to reduce noise in high speed interconnects
- Patent Title (中): 高磁导率分层膜，以降低高速互连中的噪声
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Application No.: US11492655Application Date: 2006-07-25
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Publication No.: US07829979B2Publication Date: 2010-11-09
- Inventor: Leonard Forbes , Kie Y. Ahn , Salman Akram
- Applicant: Leonard Forbes , Kie Y. Ahn , Salman Akram
- Applicant Address: US ID Boise
- Assignee: Micron Technology, Inc.
- Current Assignee: Micron Technology, Inc.
- Current Assignee Address: US ID Boise
- Agency: Schwegman, Lundberg & Woessner, P.A.
- Main IPC: H01L23/552
- IPC: H01L23/552
Abstract:
An apparatus provides a memory having a transmission line circuit with an associated high permeability material. The high permeability material may include a layered structure of a nickel iron compound.
Public/Granted literature
- US20070045817A1 High permeability layered films to reduce noise in high speed interconnects Public/Granted day:2007-03-01
Information query
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