Invention Grant
- Patent Title: Semiconductor device and method for manufacturing semiconductor device
- Patent Title (中): 半导体装置及半导体装置的制造方法
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Application No.: US11886904Application Date: 2007-04-24
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Publication No.: US07829992B2Publication Date: 2010-11-09
- Inventor: Mitsuo Sugino , Satoru Katsurayama , Tomoe Yamashiro , Tetsuya Miyamoto , Hiroyuki Yamashita
- Applicant: Mitsuo Sugino , Satoru Katsurayama , Tomoe Yamashiro , Tetsuya Miyamoto , Hiroyuki Yamashita
- Applicant Address: JP Tokyo
- Assignee: Sumitomo Bakelite Company, Ltd.
- Current Assignee: Sumitomo Bakelite Company, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Smith, Gambrell & Russell, LLP
- Priority: JP2006-123461 20060427; JP2006-166162 20060615; JP2006-192658 20060713; JP2006-195178 20060718
- International Application: PCT/JP2007/000443 WO 20070424
- International Announcement: WO2007/129458 WO 20071115
- Main IPC: H01L23/02
- IPC: H01L23/02 ; H01L23/04 ; H01L23/053 ; H01L23/12 ; H01L23/48

Abstract:
A semiconductor device (100) comprises a first resin substrate (101) on which a first semiconductor chip (125) is mounted a surface thereof; a second resin substrate (111) on which a second semiconductor chip (131) is mounted on a surface thereof; and a resin base material (109), joined to a front surface of the first resin substrate (101) and to a back surface of the second resin substrate (111), so that these surfaces are electrically connected. The resin base material (109) is disposed in a circumference of the first resin substrate (101) in the surface of the first resin substrate (101). Further, the first semiconductor chip (125) is disposed in a space section provided among the first resin substrate (101), the second resin substrate (111) and the resin base material (109) in the surface of the first resin substrate (101).
Public/Granted literature
- US20090243065A1 Semiconductor Device and Method for Manufacturing Semiconductor Device Public/Granted day:2009-10-01
Information query
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