Invention Grant
- Patent Title: Semiconductor device and method of fabrication
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US12425682Application Date: 2009-04-17
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Publication No.: US07829995B2Publication Date: 2010-11-09
- Inventor: Kazuhiko Matsumura
- Applicant: Kazuhiko Matsumura
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2008-123674 20080509; JP2009-029623 20090212
- Main IPC: H01L23/02
- IPC: H01L23/02

Abstract:
A semiconductor device includes a first die pad, a first semiconductor chip provided on the first die pad, a second die pad, a second semiconductor chip provided on the second die pad, and a sealing resin made of a first resin material, sealing the first die pad, the first semiconductor chip, the second die pad and the second semiconductor chip. A lower surface of the first semiconductor chip is connected to the first die pad. A first portion of a lower surface of the second semiconductor chip is connected to the second die pad, and a second portion not connected to the second die pad of the lower surface of the second semiconductor chip is connected to an upper surface of the first semiconductor chip via a second resin material different from the first resin material.
Public/Granted literature
- US20090278248A1 SEMICONDUCTOR DEVICE AND METHOD OF FABRICATION Public/Granted day:2009-11-12
Information query
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