Invention Grant
- Patent Title: Electronic device, method of producing the same, and semiconductor device
- Patent Title (中): 电子装置及其制造方法以及半导体装置
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Application No.: US12181536Application Date: 2008-07-29
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Publication No.: US07830007B2Publication Date: 2010-11-09
- Inventor: Shuichi Tanaka , Haruki Ito
- Applicant: Shuichi Tanaka , Haruki Ito
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2007-197174 20070730
- Main IPC: H01L23/52
- IPC: H01L23/52 ; H01L23/48 ; H01L29/40
Abstract:
A semiconductor device includes n1 first interconnects (n is an integer larger than one) respectively formed on first electrodes and extending over a first resin protrusion, and n2 second interconnects (n2
Public/Granted literature
- US20090032944A1 ELECTRONIC DEVICE, METHOD OF PRODUCING THE SAME, AND SEMICONDUCTOR DEVICE Public/Granted day:2009-02-05
Information query
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