Invention Grant
US07830012B2 Material for forming exposure light-blocking film, multilayer interconnection structure and manufacturing method thereof, and semiconductor device 有权
用于形成曝光遮光膜的材料,多层互连结构及其制造方法以及半导体器件

Material for forming exposure light-blocking film, multilayer interconnection structure and manufacturing method thereof, and semiconductor device
Abstract:
To provide a material for forming an exposure light-blocking film which includes at least one of a silicon compound expressed by the following structural formula (1) and a silicon compound expressed by the following structural formula (2), wherein at least one of R1 and R2 is replaced by a substituent capable of absorbing exposure light. (where R1 and R2 may be the same or different, and each represents any one of a hydrogen atom, alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater) (where R1, R2 and R3 may be the same or different, at least one of R1, R2 and R3 represents a hydrogen atom and the others represent any one of an alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater).
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