Invention Grant
- Patent Title: Material for forming exposure light-blocking film, multilayer interconnection structure and manufacturing method thereof, and semiconductor device
- Patent Title (中): 用于形成曝光遮光膜的材料,多层互连结构及其制造方法以及半导体器件
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Application No.: US12728480Application Date: 2010-03-22
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Publication No.: US07830012B2Publication Date: 2010-11-09
- Inventor: Shirou Ozaki , Yoshihiro Nakata
- Applicant: Shirou Ozaki , Yoshihiro Nakata
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Priority: JP2006-037025 20060214
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
To provide a material for forming an exposure light-blocking film which includes at least one of a silicon compound expressed by the following structural formula (1) and a silicon compound expressed by the following structural formula (2), wherein at least one of R1 and R2 is replaced by a substituent capable of absorbing exposure light. (where R1 and R2 may be the same or different, and each represents any one of a hydrogen atom, alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater) (where R1, R2 and R3 may be the same or different, at least one of R1, R2 and R3 represents a hydrogen atom and the others represent any one of an alkyl group, alkenyl group, cycloalkyl group and aryl group which are optionally substituted, and n is an integer of 2 or greater).
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