Invention Grant
- Patent Title: Via bottom contact and method of manufacturing same
- Patent Title (中): 通过底部接触及其制造方法
-
Application No.: US12431289Application Date: 2009-04-28
-
Publication No.: US07830019B2Publication Date: 2010-11-09
- Inventor: Kaushik Chanda , Lawrence A. Clevenger , Andrew P. Cowley , Jason P. Gill , Baozhen Li , Chih-Chao Yang
- Applicant: Kaushik Chanda , Lawrence A. Clevenger , Andrew P. Cowley , Jason P. Gill , Baozhen Li , Chih-Chao Yang
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agency: Roberts Mlotkowski Safran & Cole, P.C.
- Agent Richard Kotulak
- Main IPC: H01L23/04
- IPC: H01L23/04
Abstract:
A method of fabricating a device includes depositing a electromigration (EM) resistive material in an etched trench formed in a substrate and a wiring layer. The EM resistive material is formed in electrical contact with an underlying diffusion barrier layer and wiring layer. The method further includes forming a via structure in electrical contact with the EM resistive material and the wiring layer. The method results in a structure which prevents an open circuit.
Public/Granted literature
- US20090200673A1 VIA BOTTOM CONTACT AND METHOD OF MANUFACTURING SAME Public/Granted day:2009-08-13
Information query
IPC分类:
