Invention Grant
US07830096B2 Circuit with improved efficiency and crest factor for current fed bipolar junction transistor (BJT) based electronic ballast
失效
具有改进的电流馈电双极结型晶体管（BJT）电子镇流器的效率和波峰因数的电路
- Patent Title: Circuit with improved efficiency and crest factor for current fed bipolar junction transistor (BJT) based electronic ballast
- Patent Title (中): 具有改进的电流馈电双极结型晶体管（BJT）电子镇流器的效率和波峰因数的电路
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Application No.: US11931860Application Date: 2007-10-31
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Publication No.: US07830096B2Publication Date: 2010-11-09
- Inventor: Timothy Chen , Nitin Kumar , James K. Skully
- Applicant: Timothy Chen , Nitin Kumar , James K. Skully
- Applicant Address: US NY Schenectady
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Schenectady
- Agency: Fay Sharpe LLP
- Main IPC: H05B39/04
- IPC: H05B39/04
Abstract:
A current fed bipolar junction transistor (BJT) based inverter ballast includes base drive circuits configured to drive respective BJT switches, and high-speed drive reverse peak current limiting circuits, configured to operate in conjunction with the respective base drive circuits.
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