Invention Grant
- Patent Title: Film thickness measuring apparatus and film thickness measuring method
- Patent Title (中): 膜厚测定装置及膜厚测定方法
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Application No.: US12319403Application Date: 2009-01-07
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Publication No.: US07830141B2Publication Date: 2010-11-09
- Inventor: Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
- Applicant: Takashi Fujita , Toshiyuki Yokoyama , Keita Kitade
- Applicant Address: JP Tokyo
- Assignee: Tokyo Seimitsu Co., Ltd.
- Current Assignee: Tokyo Seimitsu Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Fattibene & Fattibene
- Agent Paul A. Fattibene
- Priority: JP2008-027764 20080207
- Main IPC: G01B7/06
- IPC: G01B7/06 ; G01R33/12

Abstract:
Coil is made to be disposed with gap opposed to the surface of wafer, and wafer stage is made to move in X and Y direction and R and θ direction. When supplying an alternating current to coil with the frequency swept by impedance analyzer, the magnetic field made to be induced in coil will operate on the conductive film of wafer. By changing a parameter (a frequency or an angle) influencing the skin effect of the conductive film and giving the parameter to coil, the state where a magnetic field is not made to penetrate relatively the film of wafer and the state where the magnetic field is made to penetrate relatively the film can be formed. From the variation of various values corresponding to the eddy current induced based on the change of state influenced by the skin effect of the conductive film, the film thickness of wafer can be measured with sufficient accuracy.
Public/Granted literature
- US20090256558A1 Film thickness measuring apparatus and film thickness measuring method Public/Granted day:2009-10-15
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