Method and apparatus for initializing an integrated circuit are described. A static memory includes an array of memory cells having control lines coupled to a column select component and data lines coupled to a register component. The static memory is formed in one or more first process layers of the integrated circuit. A non-volatile memory includes an array of non-volatile memory cells disposed between column electrodes and row electrodes. The non-volatile memory is formed in one or more second process layers of the integrated circuit disposed above the one or more first process layers. An interface circuit is configured to couple the column select component to the column electrodes and the register component to the row electrodes.