Invention Grant
- Patent Title: Dynamically-driven deep n-well circuit
- Patent Title (中): 动态驱动深n阱电路
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Application No.: US12166559Application Date: 2008-07-02
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Publication No.: US07830199B2Publication Date: 2010-11-09
- Inventor: Janet M. Brunsilius , Stephen R. Kosic , Corey D. Petersen
- Applicant: Janet M. Brunsilius , Stephen R. Kosic , Corey D. Petersen
- Applicant Address: US MA Norwood
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Norwood
- Agency: Kenyon & Kenyon LLP
- Main IPC: H03K3/01
- IPC: H03K3/01

Abstract:
A circuit includes an NMOS transistor having a drain and a source, a p-well containing the drain and the source, an n-well under the p-well, and a first well switch configured to selectively connect the n-well to a predetermined voltage in response to an enable phase of a first switching signal. The first well switch can be configured to connect the n-well to the predetermined voltage during the enable phase of the first switching signal and to electrically float the n-well during a non-enable phase of the first switching signal.
Public/Granted literature
- US20100001787A1 DYNAMICALLY-DRIVEN DEEP N-WELL CIRCUIT Public/Granted day:2010-01-07
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