Invention Grant
- Patent Title: Fuse circuit for use in a semiconductor integrated apparatus
- Patent Title (中): 用于半导体集成设备的保险丝电路
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Application No.: US12171233Application Date: 2008-07-10
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Publication No.: US07830205B2Publication Date: 2010-11-09
- Inventor: Gyung Tae Kim
- Applicant: Gyung Tae Kim
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Baker & McKenzie LLP
- Priority: KR10-2008-0004187 20080115
- Main IPC: G11C17/16
- IPC: G11C17/16 ; G06F11/20

Abstract:
A fuse circuit of a semiconductor integrated apparatus includes first and second fuse blocks. The first fuse block includes a first up fuse block where a first plurality of fuses are arranged and a first down fuse block where a second plurality of fuses are arranged. The second plurality of fuses comprises fewer fuses than the first plurality of fuses. The second fuse block includes a second up fuse block where a third plurality of fuses are arranged, the third plurality of fuses comprising the same number of fuses as the second plurality of fuses, and a second down fuse block that includes a fourth plurality of fuses, the fourth plurality of fuses comprising the same number of fuses as the first plurality of fuses. The first up fuse block is opposite the second up fuse block and the first down fuse block is opposite the second down fuse block.
Public/Granted literature
- US20090179690A1 FUSE CIRCUIT FOR USE IN A SEMICONDUCTOR INTEGRATED APPARATUS Public/Granted day:2009-07-16
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