Invention Grant
- Patent Title: Resistive sense memory array with partial block update capability
- Patent Title (中): 具有部分块更新能力的电阻式存储阵列
-
Application No.: US12269564Application Date: 2008-11-12
-
Publication No.: US07830700B2Publication Date: 2010-11-09
- Inventor: Yiran Chen , Daniel S. Reed , Yong Lu , Harry Hongyue Liu , Hai Li
- Applicant: Yiran Chen , Daniel S. Reed , Yong Lu , Harry Hongyue Liu , Hai Li
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Fellers, Snider, et al
- Main IPC: G11C11/00
- IPC: G11C11/00

Abstract:
Various embodiments of the present invention are generally directed to a method and apparatus for carrying out a partial block update operation upon a resistive sense memory (RSM) array, such as formed from STRAM or RRAM cells. The RSM array is arranged into multi-cell blocks (sectors), each block having a physical block address (PBA). A first set of user data is written to a selected block at a first PBA. A partial block update operation is performed by writing a second set of user data to a second block at a second PBA, the second set of user data updating a portion of the first set of user data in the first PBA. The first and second blocks are thereafter read to retrieve the second set of user data and a remaining portion of the first set of user data.
Public/Granted literature
- US20100118587A1 RESISTIVE SENSE MEMORY ARRAY WITH PARTIAL BLOCK UPDATE CAPABILITY Public/Granted day:2010-05-13
Information query