Invention Grant
US07830709B2 Integrated circuit, method of reading data stored within a memory device of an integrated circuit, method of writing data into a memory device of an integrated circuit, memory module, and computer program
有权
集成电路，读取存储在集成电路的存储器件中的数据的方法，将数据写入集成电路的存储器件，存储器模块和计算机程序
- Patent Title: Integrated circuit, method of reading data stored within a memory device of an integrated circuit, method of writing data into a memory device of an integrated circuit, memory module, and computer program
- Patent Title (中): 集成电路，读取存储在集成电路的存储器件中的数据的方法，将数据写入集成电路的存储器件，存储器模块和计算机程序
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Application No.: US11709289Application Date: 2007-02-21
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Publication No.: US07830709B2Publication Date: 2010-11-09
- Inventor: Jan Keller
- Applicant: Jan Keller
- Applicant Address: DE Munich FR Corbeil Essonnes Cedex
- Assignee: Qimonda AG,ALTIS Semiconductor, SNC
- Current Assignee: Qimonda AG,ALTIS Semiconductor, SNC
- Current Assignee Address: DE Munich FR Corbeil Essonnes Cedex
- Main IPC: G11C16/04
- IPC: G11C16/04
Abstract:
A memory device comprises a plurality of memory cells, each of which comprising a first electrode, a second electrode and an active material arranged between the first electrode and the second electrode, wherein the memory cells are grouped into memory cell groups, each memory cell group defining a memory cell group area and being configured such that corresponding first electrodes are individually addressable, and corresponding second electrodes are commonly addressable via a common select device provided within the memory cell group area of the memory cell group.
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