Invention Grant
- Patent Title: Semiconductor integrated circuit device and redundancy method thereof
- Patent Title (中): 半导体集成电路器件及其冗余方法
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Application No.: US12165720Application Date: 2008-07-01
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Publication No.: US07830736B2Publication Date: 2010-11-09
- Inventor: Takehiko Hojo , Tomohiro Kobayashi , Tetsuya Amano
- Applicant: Takehiko Hojo , Tomohiro Kobayashi , Tetsuya Amano
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2007-176550 20070704
- Main IPC: G11C29/00
- IPC: G11C29/00
Abstract:
A semiconductor integrated circuit device includes a first fuse circuit, a second fuse circuit, and a control signal generating circuit which sends a first control signal and executes program such that the resistance value of the first fuse circuit becomes greater than the resistance value of the second fuse circuit, and sends a second control signal and executes reprogram such that the resistance value of the second fuse circuit becomes greater than the resistance value of the first fuse circuit.
Public/Granted literature
- US20090010085A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE AND REDUNDANCY METHOD THEREOF Public/Granted day:2009-01-08
Information query
