Invention Grant
- Patent Title: Memory system with error detection and retry modes of operation
- Patent Title (中): 具有错误检测和重试操作模式的内存系统
-
Application No.: US11145429Application Date: 2005-06-03
-
Publication No.: US07831882B2Publication Date: 2010-11-09
- Inventor: Ely K. Tsern , Mark A. Horowitz , Frederick A. Ware
- Applicant: Ely K. Tsern , Mark A. Horowitz , Frederick A. Ware
- Applicant Address: US CA Los Altos
- Assignee: Rambus Inc.
- Current Assignee: Rambus Inc.
- Current Assignee Address: US CA Los Altos
- Agency: Morgan, Lewis & Bockius LLP
- Main IPC: H03M13/00
- IPC: H03M13/00 ; G11C13/00

Abstract:
A memory system includes a link having at least one signal line and a controller. The controller includes at least one transmitter coupled to the link to transmit first data, and a first error protection generator coupled to the transmitter. The first error protection generator dynamically adds an error detection code to at least a portion of the first data. At least one receiver is coupled to the link to receive second data. A first error detection logic determines if the second data received by the controller contains at least one error and, if an error is detected, asserts a first error condition. The system includes a memory device having at least one memory device transmitter coupled to the link to transmit the second data. A second error protection generator coupled to the memory device transmitter dynamically adds an error detection code to at least a portion of the second data.
Public/Granted literature
- US20060277434A1 Memory system with error detection and retry modes of operation Public/Granted day:2006-12-07
Information query
IPC分类: