Invention Grant
- Patent Title: Semiconductor device having current spreading layer
- Patent Title (中): 具有电流扩展层的半导体器件
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Application No.: US11638638Application Date: 2006-12-12
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Publication No.: US07834373B2Publication Date: 2010-11-16
- Inventor: Jian Feng , Hung-Shen Chu , Shengmei Zheng
- Applicant: Jian Feng , Hung-Shen Chu , Shengmei Zheng
- Applicant Address: HK Shatin, New Territories
- Assignee: Hong Kong Applied Science and Technology Research Institute Company Limited
- Current Assignee: Hong Kong Applied Science and Technology Research Institute Company Limited
- Current Assignee Address: HK Shatin, New Territories
- Agency: Wells St. John, P.S.
- Main IPC: H01L33/36
- IPC: H01L33/36
Abstract:
A semiconductor device has a current spreading layer between a semiconductor material and an electrode for connecting the semiconductor material to an electrical power supply. The current spreading layer has two or more sub-layers of a first conductive material with patterned regions of a second conductive material distributed between the sub-layers for spreading an electrical current passing between the electrode and the semiconductor material. The second material has an ohmic resistance lower than the first material.
Public/Granted literature
- US20080135867A1 Semiconductor device having current spreading layer Public/Granted day:2008-06-12
Information query
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