Invention Grant
- Patent Title: Semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件
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Application No.: US11733351Application Date: 2007-04-10
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Publication No.: US07834377B2Publication Date: 2010-11-16
- Inventor: Toshiaki Iwamatsu
- Applicant: Toshiaki Iwamatsu
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2006-109733 20060412
- Main IPC: H01L29/74
- IPC: H01L29/74 ; H01L27/12 ; H01L27/108
Abstract:
A finger length a1 of a transistor P11 is longer than a finger length A1 of a transistor P1, and a finger length b1 of a transistor N11 is longer than a finger length B1 of a transistor N1. The finger length b1 of the transistor N11 is shorter than the finger length A1 of the transistor P1, and the relation: a1>A1>b1>B1 is established. In a relation between an I/O section and a logic circuit section, as for MOS transistor of the same conductive type, a finger length of a MOS transistor constituting the logic circuit section is set so as to be longer than a finger length of a MOS transistor constituting the I/O section.
Public/Granted literature
- US20070241365A1 SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE Public/Granted day:2007-10-18
Information query
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