Invention Grant
US07834388B2 Memory array of non-volatile electrically alterable memory cells for storing multiple data
有权
用于存储多个数据的非易失性电可变存储器单元的存储器阵列
- Patent Title: Memory array of non-volatile electrically alterable memory cells for storing multiple data
- Patent Title (中): 用于存储多个数据的非易失性电可变存储器单元的存储器阵列
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Application No.: US11348556Application Date: 2006-02-06
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Publication No.: US07834388B2Publication Date: 2010-11-16
- Inventor: Andy Yu , Ying W. Go
- Applicant: Andy Yu , Ying W. Go
- Applicant Address: US CA Palo Alto
- Assignee: Nanostar Corporation
- Current Assignee: Nanostar Corporation
- Current Assignee Address: US CA Palo Alto
- Agency: Haynes and Boone, LLP
- Main IPC: H01L29/788
- IPC: H01L29/788 ; H01L21/8238
Abstract:
A memory cell that includes a control gate disposed laterally between two floating gates where each floating gate is capable of holding data. Each floating gate in a memory cell may be erased and programmed by applying a combination of voltages to diffusion regions, the control gate, and a well. A plurality of memory cells creates a memory string, and a memory array is formed from a plurality of memory strings arranged in rows and columns.
Public/Granted literature
- US20060131640A1 Memory array of non-volatile electrically alterable memory cells for storing multiple data Public/Granted day:2006-06-22
Information query
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