Invention Grant
- Patent Title: Thin film transistor, method of fabricating the same, and a display device including the thin film transistor
- Patent Title (中): 薄膜晶体管，其制造方法以及包括薄膜晶体管的显示装置
-
Application No.: US11509853Application Date: 2006-08-25
-
Publication No.: US07834397B2Publication Date: 2010-11-16
- Inventor: Byoung-Keon Park , Byoung-Deog Choi , Myeong-Seob So
- Applicant: Byoung-Keon Park , Byoung-Deog Choi , Myeong-Seob So
- Applicant Address: KR Yongin
- Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee: Samsung Mobile Display Co., Ltd.
- Current Assignee Address: KR Yongin
- Agency: Christie, Parker & Hale, LLP
- Priority: KR10-2005-0078757 20050826
- Main IPC: H01L27/12
- IPC: H01L27/12
Abstract:
A thin film transistor (TFT), a method of fabricating the same, and a display device including the TFT, are provided. In the TFT, a channel region is connected to a gate electrode so that the influence of a substrate bias is reduced or eliminated. Thus, the threshold voltage of the TFT is reduced, a subthreshold slope can be improved, and a large drain current can be obtained at a low gate voltage.
Public/Granted literature
Information query
IPC分类:
