Invention Grant
- Patent Title: Bipolar transistor FINFET technology
- Patent Title (中): 双极晶体管FINFET技术
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Application No.: US11837972Application Date: 2007-08-13
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Publication No.: US07834403B2Publication Date: 2010-11-16
- Inventor: Ronald Kakoschke , Klaus Schrüfer
- Applicant: Ronald Kakoschke , Klaus Schrüfer
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Infineon Technologies
- Agent Philip H. Schlazer
- Main IPC: H01L29/76
- IPC: H01L29/76 ; H01L29/94 ; H01L31/062 ; H01L31/113 ; H01L31/119

Abstract:
This document discusses, among other things, apparatus having at least one CMOS transistor overlying a substrate; and at least one finned bipolar transistor overlying the substrate and methods for making the apparatus.
Public/Granted literature
- US20090045467A1 BIPOLAR TRANSISTOR FINFET TECHNOLOGY Public/Granted day:2009-02-19
Information query
IPC分类: