Invention Grant
US07834411B2 CMOS pixel sensor with depleted photocollectors and a depleted common node
有权
具有耗尽的光电收集器和耗尽的公共节点的CMOS像素传感器
- Patent Title: CMOS pixel sensor with depleted photocollectors and a depleted common node
- Patent Title (中): 具有耗尽的光电收集器和耗尽的公共节点的CMOS像素传感器
-
Application No.: US11748928Application Date: 2007-05-15
-
Publication No.: US07834411B2Publication Date: 2010-11-16
- Inventor: Richard B. Merrill , Shri Ramaswami , Glenn J. Keller
- Applicant: Richard B. Merrill , Shri Ramaswami , Glenn J. Keller
- Applicant Address: US CA Santa Clara
- Assignee: Foveon, Inc.
- Current Assignee: Foveon, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Lewis and Roca LLP
- Main IPC: H01L31/00
- IPC: H01L31/00

Abstract:
An active pixel sensor in a p-type semiconductor body includes an n-type common node formed below a pinning region. A plurality of n-type blue detectors more lightly doped than the common node are disposed below pinning regions and are spaced apart from the common node forming channels below blue color-select gates. A buried green photocollector is coupled to the surface through a first deep contact spaced apart from the common node forming a channel below a green color-select gate. A red photocollector buried deeper than the green photocollector is coupled to the surface through a second deep contact spaced apart from the common node forming a channel below a red color-select gate. A reset-transistor has a source disposed over and in contact with the common node. A source-follower transistor has gate coupled to the common node, a drain coupled to a power-supply node, and a source forming a pixel-sensor output.
Public/Granted literature
- US20080283880A1 CMOS PIXEL SENSOR WITH DEPLETED PHOTOCOLLECTORS AND A DEPLETED COMMON NODE Public/Granted day:2008-11-20
Information query
IPC分类: