Invention Grant
- Patent Title: Semiconductor device with tensile strain and compressive strain
- Patent Title (中): 具有拉伸应变和压缩应变的半导体器件
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Application No.: US12132965Application Date: 2008-06-04
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Publication No.: US07834414B2Publication Date: 2010-11-16
- Inventor: Takashi Suzuki , Kiyoshi Ozawa
- Applicant: Takashi Suzuki , Kiyoshi Ozawa
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Westerman, Hattori, Daniels & Adrian, LLP
- Main IPC: H01L29/00
- IPC: H01L29/00
Abstract:
A semiconductor device according to the present invention includes an active region having a MOS transistor and a groove surrounding the periphery of the active region, in which the groove is filled with a combination of a first material that produces a tensile strain in the active region and a second material that produces a compressive strain. Thereby, the foregoing object is achieved.
Public/Granted literature
- US20080237725A1 SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME Public/Granted day:2008-10-02
Information query
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