Invention Grant
- Patent Title: Method to reduce variation in CMOS delay
- Patent Title (中): 降低CMOS延迟变化的方法
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Application No.: US12129683Application Date: 2008-05-30
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Publication No.: US07834683B2Publication Date: 2010-11-16
- Inventor: Phat Truong , Jon Nguyen
- Applicant: Phat Truong , Jon Nguyen
- Applicant Address: TW Kueishan, Tao-Yuan Hsien
- Assignee: Nanya Technology Corp.
- Current Assignee: Nanya Technology Corp.
- Current Assignee Address: TW Kueishan, Tao-Yuan Hsien
- Agent Winston Hsu; Scott Margo
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
Controlled voltage circuit for compensating the performance variations in integrate circuits caused by voltage supply, temperature, and process variations is proposed. The controlled voltage circuit includes several MOSFET transistors connected in series, a unity gain operational amplifier, and a constant current source with an input terminal and an output terminal. The input source terminal of the first MOSFET is connected to a constant current source and to the unity gain operational amplifier. The output terminal of the circuit is connected to the CMOS delay block. To compensate for the performance variation, the output voltage node at or before the unity gain operational amplifier is shifted higher as the operating process state is slowed down or as the temperature is increased. Conversely, the output voltage node is shifted lower as the process becomes faster or the temperature is reduced.
Public/Granted literature
- US20090295466A1 METHOD TO REDUCE VARIATION IN CMOS DELAY Public/Granted day:2009-12-03
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