Invention Grant
US07834684B2 Sizing and placement of charge recycling (CR) transistors in multithreshold complementary metal-oxide-semiconductor (MTCMOS) circuits
有权
电荷回收(CR)晶体管在多阈值互补金属氧化物半导体(MTCMOS)电路中的尺寸和放置
- Patent Title: Sizing and placement of charge recycling (CR) transistors in multithreshold complementary metal-oxide-semiconductor (MTCMOS) circuits
- Patent Title (中): 电荷回收(CR)晶体管在多阈值互补金属氧化物半导体(MTCMOS)电路中的尺寸和放置
-
Application No.: US12263312Application Date: 2008-10-31
-
Publication No.: US07834684B2Publication Date: 2010-11-16
- Inventor: Farzan Fallah , Ehsan Pakbaznia , Massoud Pedram
- Applicant: Farzan Fallah , Ehsan Pakbaznia , Massoud Pedram
- Applicant Address: JP Kawasaki
- Assignee: Fujitsu Limited
- Current Assignee: Fujitsu Limited
- Current Assignee Address: JP Kawasaki
- Agency: Baker Botts L.L.P.
- Main IPC: G05F1/10
- IPC: G05F1/10

Abstract:
In one embodiment, a circuit includes a first row of circuit blocks that are each connected to a supply directly and to ground via a first sleep transistor. A connection between the first circuit block and the first sleep transistor is a virtual ground node. The circuit includes a second row of circuit blocks that are each connected to ground directly and to the supply via a second sleep transistor. A connection between the second circuit block and the second sleep transistor is a virtual supply node. The circuit includes a transmission gate (TG) or pass transistor connecting the virtual ground nodes to the virtual supply nodes to enable charge recycling between circuit blocks in the first row and circuit blocks in the second row during transitions by the circuit from active mode to sleep mode, from sleep mode to active mode, or both.
Public/Granted literature
Information query
IPC分类: