Invention Grant
- Patent Title: Capacitor and method for fabricating the same
- Patent Title (中): 电容器及其制造方法
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Application No.: US12569769Application Date: 2009-09-29
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Publication No.: US07835134B2Publication Date: 2010-11-16
- Inventor: Deok-Sin Kil , Han-Sang Song , Seung-Jin Yeom , Ki-Seon Park , Jae-Sung Roh
- Applicant: Deok-Sin Kil , Han-Sang Song , Seung-Jin Yeom , Ki-Seon Park , Jae-Sung Roh
- Applicant Address: KR
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR
- Agency: Blakely, Sokoloff, Taylor & Zafman
- Priority: KR2005-0107399 20051110
- Main IPC: H01G4/06
- IPC: H01G4/06

Abstract:
A capacitor includes a lower electrode, a dielectric structure over the lower electrode, the dielectric structure including at least one crystallized zirconium oxide (ZrO2) layer and at least one amorphous aluminum oxide (Al2O3) layer, and an upper electrode formed over the dielectric structure. A method for fabricating a capacitor includes forming a lower electrode over a certain structure, forming a dielectric structure including at least one crystallized zirconium oxide (ZrO2) layer and at least one amorphous aluminum oxide (Al2O3) layer over the lower electrode, and forming an upper electrode over the dielectric structure.
Public/Granted literature
- US20100014212A1 CAPACITOR AND METHOD FOR FABRICATING THE SAME Public/Granted day:2010-01-21
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