Invention Grant
- Patent Title: Nonvolatile storage device and control method thereof
- Patent Title (中): 非易失性存储装置及其控制方法
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Application No.: US11986331Application Date: 2007-11-20
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Publication No.: US07835183B2Publication Date: 2010-11-16
- Inventor: Minoru Yamashita
- Applicant: Minoru Yamashita
- Applicant Address: US CA Sunnyvale
- Assignee: Spansion LLC
- Current Assignee: Spansion LLC
- Current Assignee Address: US CA Sunnyvale
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A nonvolatile memory device that responds to a decrease in electric charge stored in memory cells attributed to the charge loss phenomenon occurring during program operation by adjusting the level of a program verify operation according to the degree of the charge loss so that the program operation can be performed with little (if any) interruption.
Public/Granted literature
- US20080144388A1 Nonvolatile storage device and control method thereof Public/Granted day:2008-06-19
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