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US07835189B2 High accuracy adaptive programming 有权
高精度自适应编程

High accuracy adaptive programming
Abstract:
Flash memory devices have a plurality of memory cells that can be erased and programmed. Performing a voltage verification check allows a for an appropriate state-change voltage to be applied to the flash memory device. The appropriate state-change voltage is determined though accessing a look-up table. Using an appropriate state-change voltage allows a cell to operate with more overall programming cycles.
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