Invention Grant
- Patent Title: Semiconductor device and method of fabricating the same
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US12379917Application Date: 2009-03-04
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Publication No.: US07835211B2Publication Date: 2010-11-16
- Inventor: Takehiro Ueda
- Applicant: Takehiro Ueda
- Applicant Address: JP Kawasaki, Kanagawa
- Assignee: NEC Electronics Corporation
- Current Assignee: NEC Electronics Corporation
- Current Assignee Address: JP Kawasaki, Kanagawa
- Agency: McGinn IP Law Group PLLC
- Priority: JP2005-327248 20051111
- Main IPC: G11C17/18
- IPC: G11C17/18 ; G11C5/06
Abstract:
A semiconductor device is provided including a first fuse link having a copper-containing metal film, a second fuse link having a polysilicon film, a semiconductor substrate, and a field insulating film formed on the semiconductor substrate. The second fuse link is formed on the field insulating film. An interlayer insulating film is provided between the first fuse link and the second fuse link. The first fuse link is electrically connected to the second fuse link via a first plug formed in the interlayer insulating film.
Public/Granted literature
- US20090174029A1 Semiconductor device and method of fabricating the same Public/Granted day:2009-07-09
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