Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
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Application No.: US11491026Application Date: 2006-07-24
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Publication No.: US07835422B2Publication Date: 2010-11-16
- Inventor: Yoshiyuki Kurokawa
- Applicant: Yoshiyuki Kurokawa
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2005-222194 20050729; JP2005-318543 20051101
- Main IPC: H04B1/69
- IPC: H04B1/69 ; H04B1/38

Abstract:
In a semiconductor device having a large-scale arithmetic circuit, when there is delay in clock signals, a malfunction occurs in a circuit. In particular, in an environment where supply voltage varies as in a wireless chip, it is very difficult to precisely estimate delays in clock signals in designing. Further, in order to keep supply voltage stable, a large-scale power supply circuit is required, which increases the area of a chip, and the cost thereof. A semiconductor device provided with a power control circuit and a clock generation circuit is used to detect variation in supply voltage using the power control circuit and changing frequency and duty ratio of a clock circuit using the clock generation circuit, thereby operating an arithmetic circuit stably. A high performance semiconductor device provided with such a large-scale arithmetic circuit can be provided at low cost.
Public/Granted literature
- US20070028194A1 Semiconductor device Public/Granted day:2007-02-01
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