Invention Grant
- Patent Title: Method and apparatus for extracting characteristic of semiconductor integrated circuit
- Patent Title (中): 用于提取半导体集成电路特性的方法和装置
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Application No.: US11389009Application Date: 2006-03-27
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Publication No.: US07835888B2Publication Date: 2010-11-16
- Inventor: Yoshio Inoue , Takashi Yoneda , Masaru Ito
- Applicant: Yoshio Inoue , Takashi Yoneda , Masaru Ito
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Priority: JP2005-323806 20051108
- Main IPC: G06F17/10
- IPC: G06F17/10
Abstract:
A method for efficiently extracting a variation distribution of a characteristic for a semiconductor integrated circuit. The method extracts a characteristic distribution of a semiconductor integrated circuit by performing a mathematical analysis using a polynomial expression based on a variation distribution of a process sensitivity parameter.
Public/Granted literature
- US20070106966A1 Method and apparatus for extracting characteristic of semiconductor integrated circuit Public/Granted day:2007-05-10
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