Invention Grant
- Patent Title: Nonvolatile semiconductor memory apparatus and memory system
- Patent Title (中): 非易失性半导体存储器和存储器系统
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Application No.: US11714871Application Date: 2007-03-07
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Publication No.: US07836243B2Publication Date: 2010-11-16
- Inventor: Takeshi Ishimoto , Kazuhiro Suzuki
- Applicant: Takeshi Ishimoto , Kazuhiro Suzuki
- Applicant Address: JP Tokyo
- Assignee: Sony Corporation
- Current Assignee: Sony Corporation
- Current Assignee Address: JP Tokyo
- Agency: Rader, Fishman & Grauer PLLC
- Priority: JP2006-070416 20060301
- Main IPC: G06F12/00
- IPC: G06F12/00

Abstract:
A nonvolatile semiconductor memory apparatus is disclosed which includes: a nonvolatile memory configured to be electrically rewritable; and a controller configured to control access to the nonvolatile memory based on information about access to the nonvolatile memory; wherein the controller selects one of a plurality of trade-offs between access reliability and performance and carries out access control in accordance with the selected trade-off.
Public/Granted literature
- US20070208906A1 Nonvolatile semiconductor memory apparatus and memory system Public/Granted day:2007-09-06
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