Invention Grant
US07836244B2 Method of providing block state information in semiconductor memory device including flash memory
有权
在包括闪速存储器的半导体存储器件中提供块状态信息的方法
- Patent Title: Method of providing block state information in semiconductor memory device including flash memory
- Patent Title (中): 在包括闪速存储器的半导体存储器件中提供块状态信息的方法
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Application No.: US11933564Application Date: 2007-11-01
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Publication No.: US07836244B2Publication Date: 2010-11-16
- Inventor: Hye-Young Kim , Jung-Been Im
- Applicant: Hye-Young Kim , Jung-Been Im
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2006-0107556 20061102
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F13/00 ; G06F13/28
Abstract:
A method of providing block state information in a semiconductor memory device including a flash memory comprises storing block state information on at least one bad block of the flash memory and a plurality of reserved blocks which replace the at least one bad block, and providing the stored block state information to a user in response to a command provided by the user.
Public/Granted literature
- US20080109591A1 METHOD OF PROVIDING BLOCK STATE INFORMATION IN SEMICONDUCTOR MEMORY DEVICE INCLUDING FLASH MEMORY Public/Granted day:2008-05-08
Information query
