Invention Grant
- Patent Title: Plasma processing apparatus capable of adjusting temperature of sample stand
- Patent Title (中): 能够调节样品台温度的等离子体处理装置
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Application No.: US11512118Application Date: 2006-08-30
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Publication No.: US07838792B2Publication Date: 2010-11-23
- Inventor: Takumi Tandou , Ken'etsu Yokogawa , Seiichiro Kanno , Masaru Izawa
- Applicant: Takumi Tandou , Ken'etsu Yokogawa , Seiichiro Kanno , Masaru Izawa
- Applicant Address: JP Tokyo
- Assignee: Hitachi High-Technologies Corporation
- Current Assignee: Hitachi High-Technologies Corporation
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2006-202716 20060726
- Main IPC: B23K9/02
- IPC: B23K9/02 ; H05H1/24

Abstract:
A plasma processing apparatus is provided which processes a sample held on a sample table arranged in a process chamber in a vacuum container by using a plasma formed in the process chamber. The plasma processing apparatus comprises: paths arranged in the sample table in which a coolant is supplied and vaporized as it flows; a refrigeration cycle having the sample table, a compressor, a condenser and an expansion valve connected in that order and having the coolant circulate therein; coolant passages to cause the coolant that has passed through the expansion valve to branch and then merge with a coolant returning from the paths in the sample table toward the compressor; and a regulator to adjust an amount of coolant passing through the paths in the sample table and circulating in the refrigeration cycle and an amount of coolant branching and flowing through the coolant passages.
Public/Granted literature
- US20080023448A1 Plasma processing apparatus capable of adjusting temperature of sample stand Public/Granted day:2008-01-31
Information query
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