Invention Grant
US07838853B2 Plasma radiation source, method of forming plasma radiation, apparatus for projecting a pattern from a patterning device onto a substrate and device manufacturing method
有权
等离子体辐射源,形成等离子体辐射的方法,用于将图案从图案形成装置投影到衬底上的装置和器件制造方法
- Patent Title: Plasma radiation source, method of forming plasma radiation, apparatus for projecting a pattern from a patterning device onto a substrate and device manufacturing method
- Patent Title (中): 等离子体辐射源,形成等离子体辐射的方法,用于将图案从图案形成装置投影到衬底上的装置和器件制造方法
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Application No.: US11638670Application Date: 2006-12-14
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Publication No.: US07838853B2Publication Date: 2010-11-23
- Inventor: Vladimir Vitalevitch Ivanov , Vadim Yevgenyevich Banine , Konstantin Nikolaevitch Koshelev
- Applicant: Vladimir Vitalevitch Ivanov , Vadim Yevgenyevich Banine , Konstantin Nikolaevitch Koshelev
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Agency: Pillsbury Winthrop Shaw Pittman LLP
- Main IPC: G01K5/00
- IPC: G01K5/00

Abstract:
A patterned beam of radiation is projected onto a substrate. A reflective optical element is used to help form the radiation beam from radiation emitted from a plasma region of a plasma source. In the plasma source, a plasma current is generated in the plasma region. To reduce damage to the reflective optical element, a magnetic field is applied in the plasma region with at least a component directed along a direction of the plasma current. This axial magnetic field helps limit the collapse of the Z-pinch region of the plasma. By limiting the collapse, the number of fast ions emitted may be reduced.
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