Invention Grant
US07838876B2 Optoelectronic semiconductor device in which current spreading layer of sol gel material mixed with nanoparticles is mixed with wavelength conversion dyes
有权
将与纳米颗粒混合的溶胶凝胶材料的电流扩散层与波长转换染料混合的光电子半导体器件
- Patent Title: Optoelectronic semiconductor device in which current spreading layer of sol gel material mixed with nanoparticles is mixed with wavelength conversion dyes
- Patent Title (中): 将与纳米颗粒混合的溶胶凝胶材料的电流扩散层与波长转换染料混合的光电子半导体器件
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Application No.: US11527229Application Date: 2006-09-26
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Publication No.: US07838876B2Publication Date: 2010-11-23
- Inventor: Norwin von Malm
- Applicant: Norwin von Malm
- Applicant Address: DE Regensburg
- Assignee: Osram Opto Semiconductors GmbH
- Current Assignee: Osram Opto Semiconductors GmbH
- Current Assignee Address: DE Regensburg
- Agency: Cohen Pontani Lieberman & Pavane LLP
- Priority: DE102005046450 20050928
- Main IPC: H01L33/00
- IPC: H01L33/00 ; H01L29/10 ; H01L29/12
Abstract:
An optoelectronic semiconductor chip comprises a radiation passage area (2d), to which is applied a current spreading layer (4) containing particles (4b) of a wavelength conversion material. Furthermore, a method for producing such a semiconductor chip and also a device comprising such a semiconductor chip are specified.
Public/Granted literature
- US20070080361A1 Optoelectronic semiconductor chip, method for producing it, and optoelectronic device Public/Granted day:2007-04-12
Information query
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