Invention Grant
US07838879B2 Array substrate having enhanced aperture ratio, method of manufacturing the same and display device having the same
有权
具有增加的孔径比的阵列基片,其制造方法和具有其的显示装置
- Patent Title: Array substrate having enhanced aperture ratio, method of manufacturing the same and display device having the same
- Patent Title (中): 具有增加的孔径比的阵列基片,其制造方法和具有其的显示装置
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Application No.: US11493364Application Date: 2006-07-26
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Publication No.: US07838879B2Publication Date: 2010-11-23
- Inventor: Jin-Suk Park
- Applicant: Jin-Suk Park
- Applicant Address: KR Suwon-Si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si
- Agency: F. Chau & Associates, LLC
- Priority: KR10-2005-0069583 20050729
- Main IPC: H01L31/14
- IPC: H01L31/14

Abstract:
An array substrate includes a substrate, a thin film transistor, a passivation layer, a pixel electrode and a storage capacitor. The thin film transistor includes a gate electrode formed on the substrate, a gate insulation layer formed on the substrate having the gate electrode, a semiconductor layer formed on the gate insulation layer and a data electrode formed on the semiconductor layer. The passivation layer is formed on the substrate having the data electrode and the pixel electrode is electrically connected to the data electrode through a contact hole formed through the passivation layer. The storage capacitor includes a first storage capacitor electrode that is spaced apart from the gate electrode of the thin film transistor and a second storage capacitor electrode that is formed on the gate insulation and including a same material as the pixel electrode.
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