Invention Grant
- Patent Title: Electro-mechanical component, such as a strained Si Fin-FET
- Patent Title (中): 机电组件，如应变Si Fin-FET
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Application No.: US11236884Application Date: 2004-01-31
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Publication No.: US07838950B2Publication Date: 2010-11-23
- Inventor: Gruetzmacher Detlev
- Applicant: Gruetzmacher Detlev
- Applicant Address: CH Villigen PSI
- Assignee: Paul Scherer Institut
- Current Assignee: Paul Scherer Institut
- Current Assignee Address: CH Villigen PSI
- Agent Laurence A. Greenberg; Werner H. Stemer; Ralph E. Locher
- Priority: EP03008446 20030411
- International Application: PCT/EP2004/000867 WO 20040131
- International Announcement: WO2004/089811 WO 20041021
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
The present invention is an electro mechanical component, such as a nano-electro-mechanical component, having a first, a second and a third portion arranged such that the second portion is used to functionally connect the first and the third portion. In the present invention, the second portion is a bilayer having a first and a second layer made from two dissimilar at least semiconductive materials; the two materials have different lattice constants; and the first layer harbors tensile strain close to an interface connecting the first and the second layer and harbors compressive strain at its surface; and the second layer harbors compressive strain close to the interface connecting the first and the second layer and tensile strain at the relaxed outer section.
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