Invention Grant
- Patent Title: MEMS device and fabrication method thereof
- Patent Title (中): MEMS器件及其制造方法
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Application No.: US11872351Application Date: 2007-10-15
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Publication No.: US07838952B2Publication Date: 2010-11-23
- Inventor: Shogo Inaba , Akira Sato , Toru Watanabe , Takeshi Mori
- Applicant: Shogo Inaba , Akira Sato , Toru Watanabe , Takeshi Mori
- Applicant Address: JP
- Assignee: Seiko Epson Corporation
- Current Assignee: Seiko Epson Corporation
- Current Assignee Address: JP
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: JP2006-286035 20061020; JP2007-131316 20070517
- Main IPC: H01L49/00
- IPC: H01L49/00

Abstract:
A micro electro mechanical system (MEMS) device includes: a fixed electrode made of silicon and provided above a semiconductor substrate; a movable electrode made of silicon and arranged in a mechanically movable manner by having a gap from the semiconductor substrate; and a wiring layered part that is provided around the movable electrode, covers a portion of the fixed electrode and includes wiring. One of the fixed electrode and the movable electrode is implanted with an impurity ion and at least a part of the portion of the fixed electrode covered by the wiring layered part is silicidized.
Public/Granted literature
- US20080093684A1 MEMS DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2008-04-24
Information query
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