Invention Grant
- Patent Title: Magnetic memory cell and magnetic random access memory
- Patent Title (中): 磁存储单元和磁性随机存取存储器
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Application No.: US11905789Application Date: 2007-10-04
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Publication No.: US07838953B2Publication Date: 2010-11-23
- Inventor: Hideo Ohno , Shoji Ikeda , Jun Hayakawa
- Applicant: Hideo Ohno , Shoji Ikeda , Jun Hayakawa
- Applicant Address: JP Tokyo
- Assignee: Hitachi, Ltd.
- Current Assignee: Hitachi, Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Antonelli, Terry, Stout & Kraus, LLP.
- Priority: JP2006-273329 20061004
- Main IPC: H01L27/108
- IPC: H01L27/108
Abstract:
A magnetic memory cell and a magnetic random access memory that are highly reliable and low-power consuming. An upper electrode having a connecting area smaller than the area of a ferromagnetic free layer of a magnetic memory cell is connected to the ferromagnetic free layer. A current is applied to produce an uneven magnetic field over the magnetic memory cell, whereby spin-transfer torque magnetization reversal can be realized with low current and at small write error rate.
Public/Granted literature
- US20080105938A1 Magnetic memory cell and magnetic random access memory Public/Granted day:2008-05-08
Information query
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