Invention Grant
- Patent Title: Semiconductor device and radiation detector employing it
- Patent Title (中): 采用它的半导体器件和辐射探测器
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Application No.: US10546604Application Date: 2004-02-24
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Publication No.: US07838994B2Publication Date: 2010-11-23
- Inventor: Katsumi Shibayama , Yutaka Kusuyama , Masahiro Hayashi
- Applicant: Katsumi Shibayama , Yutaka Kusuyama , Masahiro Hayashi
- Applicant Address: JP Hamamatsu-shi, Shizuoka
- Assignee: Hamamatsu Photonics K.K.
- Current Assignee: Hamamatsu Photonics K.K.
- Current Assignee Address: JP Hamamatsu-shi, Shizuoka
- Agency: Drinker Biddle & Reath LLP
- Priority: JPP2003-046173 20030224
- International Application: PCT/JP2004/002136 WO 20040224
- International Announcement: WO2004/075282 WO 20040902
- Main IPC: H01L23/29
- IPC: H01L23/29

Abstract:
A wiring substrate 20, comprising a glass substrate, which is provided with through holes 20c, each having a tapered part 20d that becomes large in opening area at the side of an input surface 20a, and conductive members 21, formed on the inner walls of through holes 20c, is used. A semiconductor device 5 is arranged by connecting bump electrodes 17, provided on an output surface 15b of a PD array 15 in correspondence with conductive members 21, to input portions 21a of conductive members 21 formed on input surface 20a of wiring substrate 20. A radiation detector is arranged by connecting a scintillator 10 via an optical adhesive agent 11 to a light-incident surface 15a of PD array 15 and connecting a signal processing element 30 via bump electrodes 31 to output surface 20b of wiring substrate 20. A semiconductor device, with which the semiconductor elements and the corresponding conductive paths of the wiring substrate are connected satisfactorily, and a radiation detector using this semiconductor device are thus provided.
Public/Granted literature
- US20060231961A1 Semiconductor device and radiation detector employing it Public/Granted day:2006-10-19
Information query
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