Invention Grant
- Patent Title: Coupled inductor structure
- Patent Title (中): 耦合电感结构
-
Application No.: US12757431Application Date: 2010-04-09
-
Publication No.: US07839253B2Publication Date: 2010-11-23
- Inventor: Hsin-Chia Lu , Tzu-Wei Chao
- Applicant: Hsin-Chia Lu , Tzu-Wei Chao
- Applicant Address: TW Taipei
- Assignee: National Taiwan University
- Current Assignee: National Taiwan University
- Current Assignee Address: TW Taipei
- Agency: Edwards Angell Palmer & Dodge LLP
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW96109439A 20070320
- Main IPC: H01F5/00
- IPC: H01F5/00

Abstract:
A coupled inductor structure applied in a first dielectric layer and a second dielectric layer disposed under the first dielectric layer includes a first inductor element disposed on the first dielectric layer and a second inductor element disposed on the second dielectric layer. The first inductor element has a first bending segment, a second bending segment connected to the first bending segment, and a third bending segment connected to the second bending segment. The second bending segment of the first inductor element has on the second dielectric layer a projection intersecting a second bending segment of the second inductor element. A relative position of the first bending segment of the first inductor element to a first bending segment of the second inductor element is opposite to another relative position of the third bending segment of the first inductor element to a third bending segment of the second inductor element.
Public/Granted literature
- US20100194514A1 COUPLED INDUCTOR STRUCTURE Public/Granted day:2010-08-05
Information query